Related Experiment Video
Updated: Feb 14, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Mechanistic understanding of tungsten oxide in-plane nanostructure growth via sequential infiltration synthesis
Jae Jin Kim1, Hyo Seon Suh, Chun Zhou
1Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, USA. fister@anl.gov.
Abstract:
Tungsten oxide (WO3-x) nanostructures with hexagonal in-plane arrangements were fabricated by sequential infiltration synthesis (SIS), using the selective interaction of gas phase precursors with functional groups in one domain of a block copolymer (BCP) self-assembled template. Such structures are highly desirable for various practical applications and as model systems for fundamental studies. The nanostructures were characterized by cross-sectional scanning electron microscopy, grazing-incidence small/wide-angle X-ray scattering (GISAXS/GIWAXS), and X-ray absorption near edge structure (XANES) measurements at each stage during the SIS process and subsequent thermal treatments, to provide a comprehensive picture of their evolution in morphology, crystallography and electronic structure. In particular, we discuss the critical role of SIS Al2O3 seeds toward modifying the chemical affinity and free volume in a polymer for subsequent infiltration of gas phase precursors. The insights into SIS growth obtained from this study are valuable to the design and fabrication of a wide range of targeted nanostructures.
Related Concept Videos
Synthesis and Decomposition Reactions
Understanding the Self
Oxidation Numbers
Work Done Over an Inclined Plane
The work done by gravity to move a rigid body, or the work done by an opposing force to move a rigid body against gravity, can be calculated using the center-of-mass framework. It is the line integral of the force of gravity over the path, considered positive if...
Understanding Self-Concept
Understanding Deception

