Optimization of HNO3 leaching of copper from old AMD Athlon processors using response surface methodology
Umair Javed1, Robina Farooq2, Farrukh Shehzad3
1Department of Chemical Engineering, COMSATS Institute of Information Technology, Defence Road, Lahore, Pakistan.
Abstract:
The present study investigates the optimization of HNO3 leaching of Cu from old AMD Athlon processors under the effect of nitric acid concentration (%), temperature (°C) and ultrasonic power (W). The optimization study is carried out using response surface methodology with central composite rotatable design (CCRD). The ANOVA study concludes that the second degree polynomial model is fitted well to the fifteen experimental runs based on p-value (0.003), R2 (0.97) and Adj-R2 (0.914). The study shows that the temperature is the most significant process variable to the leaching concentration of Cu followed by nitric acid concentration. However, ultrasound power shows no significant impact on the leaching concentration. The optimum conditions were found to be 20% nitric acid concentration, 48.89 °C temperature and 5.52 W ultrasound power for attaining maximum concentration of 97.916 mg/l for Cu leaching in solution.
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