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Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide
Yanmei Sun1, Dianzhong Wen, Xuduo Bai
1School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China.
Abstract:
Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles. When applying a negative bias on the top electrode, the fabricated devices with a simple sandwich structure of indium tin oxide (ITO)/composite polymer/aluminum (Al) exhibited three distinct resistance states, which could be labeled as "OFF", "ON1" and "ON2" for ternary data storage application. The ITO/polystyrene (PS) + ZnO/Al devices can endure 3 × 104 read-cycles and exhibit a retention time of 104 s. The resistance-temperature dependence at different resistance states was investigated to confirm the temperature-dependent properties. The resistance of the "OFF" and "ON1" state reveals negative temperature dependence, manifesting a typical semiconductor characteristic. The resistance of the "ON2" state exhibits positive temperature dependence, showing metallic properties.
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