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Published on: May 13, 2020
2D strain mapping using scanning transmission electron microscopy Moiré interferometry and geometrical phase
A Pofelski1, S Y Woo1, B H Le2
1Department of Materials Science and Engineering, McMaster University, Hamilton, ON, Canada.
A new scanning transmission electron microscope (STEM) Moiré interferometry technique combined with geometrical phase analysis (GPA) enables precise 2D strain mapping. This method expands STEM GPA capabilities for larger fields of view up to a few microns.
Area of Science:
- Materials Science
- Nanotechnology
- Electron Microscopy
Background:
- Accurate strain characterization is crucial for understanding material properties.
- Conventional methods in scanning transmission electron microscopy (STEM) have limitations in field of view for strain mapping.
Purpose of the Study:
- To demonstrate a novel strain characterization technique using STEM Moiré interferometry and geometrical phase analysis (GPA).
- To extend the capabilities of high-resolution STEM GPA for quantitative 2D strain mapping over larger areas.
Main Methods:
- Utilized Moiré interferometry within a STEM setup to capture deformation fields in STEM Moiré holograms.
- Applied sampling theory and STEM electron micrograph references to simulate Moiré patterns and extract crystal lattice information.
- Employed geometrical phase analysis (GPA) to extract 2D relative strain and rotation fields from the processed data.
Main Results:
- Successfully demonstrated a technique combining STEM Moiré interferometry and GPA for strain characterization.
- Achieved de-magnification of local information to a large length scale, comparable to dark-field electron holography.
- Extended conventional STEM GPA by enabling quantitative 2D strain mapping with a field of view up to a few microns.
Conclusions:
- The developed STEM Moiré GPA method offers enhanced capabilities for materials characterization.
- This technique provides a valuable tool for analyzing strain distributions in materials with a larger field of view.
- The method bridges the gap between high-resolution local analysis and broader area characterization in electron microscopy.
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