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Updated: Feb 14, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Nonuniversal and anomalous critical behavior of the contact process near an extended defect
Róbert Juhász1, Ferenc Iglói1,2
1Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, H-1525 Budapest, P.O.Box 49, Hungary.
Abstract:
We consider the contact process near an extended surface defect, where the local control parameter deviates from the bulk one by an amount of λ(l)-λ(∞)=Al^{-s}, with l being the distance from the surface. We concentrate on the marginal situation s=1/ν_{⊥}, where ν_{⊥} is the critical exponent of the spatial correlation length, and study the local critical properties of the one-dimensional model by Monte Carlo simulations. The system exhibits a rich surface critical behavior. For weaker local activation rates A
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