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Related Concept Videos

Hydrogen Bonds00:26

Hydrogen Bonds

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Hydrogen bonds are weak attractions between atoms that have formed other chemical bonds. One of these atoms is electronegative, like oxygen, and has a partial negative charge. The other is a hydrogen atom that has bonded with another electronegative atom and has a partial positive charge.
Hydrogen Bonds Control the World!
Because hydrogen has very weak electronegativity when it binds with a strongly electronegative atom, such as oxygen or nitrogen, electrons in the bond are unequally shared....
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Hydrogen Bonds01:04

Hydrogen Bonds

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A hydrogen bond is formed when a weakly positive hydrogen atom already bonded to one electronegative atom (for example, the oxygen in the water molecule) is attracted to another electronegative atom from another polar molecule, such as water (H2O), hydrogen fluoride (HF), or ammonia (NH3). The huge electronegativity difference between the H atom (2.1) and the atom to which it is bonded (4.0 for an F atom, 3.5 for an O atom, or 3.0 for an N atom), combined with the very small size of an H atom...
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Termination of Translation01:44

Termination of Translation

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The large ribosomal subunit has several important structures essential to translation. These include the peptidyl transferase center (PTC) - which is the site where the peptide bond is formed - and a large, internal, water-filled tube through which the nascent polypeptide moves. This latter structure is called the Peptide Exit Tunnel, and it begins at the PTC and spans the body of the large ribosomal subunit. During translation, as the nascent polypeptide chain is synthesized, it passes through...
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Termination of Translation01:44

Termination of Translation

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Reduction of Alkenes: Catalytic Hydrogenation02:13

Reduction of Alkenes: Catalytic Hydrogenation

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Alkenes undergo reduction by the addition of molecular hydrogen to give alkanes. Because the process generally occurs in the presence of a transition-metal catalyst, the reaction is called catalytic hydrogenation.
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Drag Force and Terminal Speed01:18

Drag Force and Terminal Speed

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An interesting force in everyday life is the force of drag on an object when it is moving in a fluid. Like friction, the drag force always opposes the motion of an object. Unlike simple friction, the drag force is proportional to some function of the velocity of the object in that fluid. This functionality is complicated and depends upon the shape of the object, its size, its velocity, and the fluid it is in. For most large objects, such as cyclists, cars, and baseballs, that are not moving too...
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Related Experiment Video

Updated: Feb 14, 2026

Achieving Efficient Fragment Screening at XChem Facility at Diamond Light Source
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Achieving Efficient Fragment Screening at XChem Facility at Diamond Light Source

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Diamond FinFET without Hydrogen Termination.

Biqin Huang1, Xiwei Bai2, Stephen K Lam2

  • 1HRL Laboratories LLC, 3011 Malibu Canyon Road, Malibu, CA, 90265, USA. bhuang@hrl.com.

Scientific Reports
|February 17, 2018
PubMed
Summary

Researchers developed the first diamond FinFET transistor without a hydrogen-terminated channel. This novel device demonstrates excellent performance, paving the way for advanced electronics.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Diamond is a promising material for high-performance electronics due to its superior thermal and electrical properties.
  • Conventional diamond transistors often rely on hydrogen-terminated channels, which can limit device stability and performance.
  • The fin field-effect transistor (FinFET) architecture, successful in silicon technology, offers enhanced gate control.

Purpose of the Study:

  • To report the first fabrication and characterization of a diamond FinFET without a hydrogen-terminated channel.
  • To demonstrate effective channel conduction control using metal-oxide-semiconductor (MOS) structures on diamond fins.
  • To evaluate the performance of the diamond FinFET at various temperatures.

Main Methods:

  • Fabrication of diamond FinFETs with 100-nm-wide fins designed for channel pinch-off at zero gate bias.
  • Utilizing MOS structures on fins for hole accumulation and channel conduction control.
  • Characterization of device performance, including on/off ratio and current density, at room temperature and 150°C.

Main Results:

  • The diamond FinFET exhibited a high on/off ratio exceeding 3000, confirming transistor behavior.
  • Devices showed a current density of 30 mA/mm at 150°C, which is 35 times higher than at room temperature.
  • Effective channel pinch-off was achieved at zero gate bias.

Conclusions:

  • The developed diamond FinFET, without a hydrogen-terminated channel, represents a significant advancement in diamond electronics.
  • This technology merges silicon FinFET concepts with diamond material advantages for novel transistor applications.
  • The device shows potential for high-performance digital, power, and radio frequency (RF) electronics.