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Pseudohalide-Induced 2D (CH3 NH3 )2 PbI2 (SCN)2 Perovskite for Ternary Resistive Memory with High Performance

Xue-Feng Cheng1, Xiang Hou1, Jin Zhou1

  • 1College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)
|February 20, 2018
PubMed

Keywords:
2DRRAMperovskitepseudohalideternary memory

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