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Published on: April 2, 2015
Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes
1Key Laboratories of Senior-Education for Electronic Engineering, Harbin 150080, China. lileidtk@hlju.edu.cn.
Abstract:
The incorporation of the one-dimensional carbon nanomaterial carbon nanotubes (CNTs) in poly(methyl methacrylate) (PMMA) was found to successfully develop a resistive switching. It implements memristic characteristics which shift from bistable to tristable memory. The localized current pathways in the organic nanocomposite layers for each intermediate resistive state (IRS) are attributed to the trapping mechanism consistent with the fluorescent measurements. Multi-bit organic memories have attracted considerable interest, which provide an effective way to increase the memory density per unit cell area. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.
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