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Published on: December 6, 2021
Metal-Free Half-Metallicity in B-Doped gh-C3N4 Systems
Hailin Yu1, Xuefan Jiang1, Zhenguang Shao1
1Jiangsu Laboratory of Advanced Functional Materials, College of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu, Jiangsu, 215500, China.
Abstract:
Half-metallicity rising from the s/p electrons has been one of the hot topics in spintronics. Based on the first-principles of calculation, we explore the magnetic properties of the B-doped graphitic heptazine carbon nitride (gh-C3N4) system. Ferromagnetism is observed in the B-doped gh-C3N4 system. Interestingly, its ground state phase (BC1@gh-C3N4) presents a strong half-metal property. Furthermore, the half-metallicity in BC1@gh-C3N4 can sustain up to 5% compressive strain and 1.5% tensile strain. It will lose its half-metallicity, however, when the doping concentration is below 6.25%. Our results show that such a metal-free half-metallic system has promising spintronic applications.
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