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Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices
Published on: January 27, 2017
Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states
Joo-Hyeon Lee1,2, Hyung-Jun Kim1, Joonyeon Chang1
1Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, Korea.
Abstract:
In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (RP) and antiparallel (RAP) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., RAP(1) > RP > RAP(2), up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm.
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A titration is carried out for 25.00 mL of 0.100 M HCl (strong acid) with 0.100 M of a strong base NaOH. The pH at different volumes of added base solution can be calculated as follows:
(a) Titrant volume = 0 mL. The solution pH is due to the acid ionization of HCl. Because this is a strong acid, the ionization is complete and the hydronium ion molarity is 0.100 M. The pH of the solution is then:
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