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3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry

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SIMS of Organic Materials-Interface Location in Argon Gas Cluster Depth Profiles Using Negative Secondary Ions

R Havelund¹, M P Seah², M Tiddia³

¹National Physical Laboratory, Teddington, Middlesex, TW11 0LW, UK. rasmus.havelund@npl.co.uk.

Journal of the American Society for Mass Spectrometry

|February 23, 2018

Summary

Accurate interface depth profiling using secondary ion mass spectrometry requires accounting for matrix effects. This study establishes a method using integrated exponentially modified Gaussian profiles for precise interface position determination.

Area of Science:

Materials Science
Analytical Chemistry
Surface Science

Background:

Secondary ion mass spectrometry (SIMS) is crucial for analyzing material interfaces.
Matrix effects significantly influence interface position accuracy in SIMS depth profiling.
Accurate determination of interface positions is vital for nanoscale material characterization.

Purpose of the Study:

To develop a robust procedure for accurately defining interface positions in depth profiles obtained by SIMS.
To investigate the influence of matrix effects and roughening on interface profile shapes.
To establish a reliable method for calculating interface positions and resolutions, minimizing errors.

Main Methods:

Intensity profiles of negative secondary ions were measured at fluorenylmethyloxycarbonyl-L-pentafluorophenylalanine (FMOC) to Irganox 1010 and vice versa interfaces.
Matrix effects were quantified using homogeneous mixtures of FMOC and Irganox 1010.
Compositional profiles were modeled using an integrated exponentially modified Gaussian (EMG) function after correcting for matrix and roughening effects.
Interface positions were determined by extrapolating results to a matrix factor (Ξ) of zero.

Main Results:

Interface positions varied by approximately 10 nm depending on the selected secondary ion, due to matrix effects.
Corrected compositional profiles, independent of the secondary ion, were obtained using the integrated EMG function.
Average interface positions were determined with high precision (0.19 and 0.14 nm standard uncertainties).
Extrapolation to Ξ = 0 provided a simpler method for deducing interface positions and profiles.

Conclusions:

The established procedure accurately defines interface positions in SIMS depth profiles by correcting for matrix effects.
The integrated EMG profile offers a more accurate representation than a simple Gaussian profile.
Careful consideration of matrix factors is essential for accurate reporting of interface resolutions.

Keywords:

Depth profiling GCIB Gas cluster ion beam Interface location Matrix effects Quantification SIMS Secondary ion mass spectrometry TOF-SIMS

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