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Oxidation Numbers03:14

Oxidation Numbers

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Fabrication of Ti3C2 MXene Microelectrode Arrays for In Vivo Neural Recording
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Oxide Thin-Film Electronics using All-MXene Electrical Contacts.

Zhenwei Wang1, Hyunho Kim1, Husam N Alshareef1

  • 1Materials Science and Engineering, Physical Science & Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.

Advanced Materials (Deerfield Beach, Fla.)
|February 24, 2018
PubMed
Summary
This summary is machine-generated.

Metallic 2D MXene (Ti3C2) shows promise as an electrical contact material for electronic devices. Researchers fabricated thin-film transistors and CMOS inverters using MXene, demonstrating its potential in nanoelectronics.

Keywords:
MXenecomplementary metal oxide semiconductortin monoxidezinc oxide

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Area of Science:

  • Materials Science
  • Nanoelectronics
  • Solid-State Physics

Background:

  • 2D MXenes are known for electrochemical and electromagnetic shielding, but their use in electronics is underexplored.
  • Their metallic conductivity and hydrophilic surface suggest potential in electronics and sensing.
  • Exploring MXenes as contact materials can advance nanoelectronic device performance.

Purpose of the Study:

  • To investigate the potential of 2D MXene (Ti3C2) as an electrical contact material in electronic devices.
  • To fabricate and characterize thin-film transistors (TFTs) and complementary metal-oxide-semiconductor (CMOS) inverters using MXene contacts.
  • To evaluate the performance and stability of MXene-based electronic devices.

Main Methods:

  • Fabrication of n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) thin-film transistors (TFTs) using Ti3C2 MXene for gate, source, and drain contacts.
  • Demonstration of complementary metal-oxide-semiconductor (CMOS) inverters utilizing MXene electrical contacts.
  • Characterization of TFT performance (mobility, switching ratio) and CMOS inverter characteristics (voltage gain, noise margin).

Main Results:

  • Ti3C2 MXene forms good electrical contact with ZnO and SnO semiconductors with negligible band offsets.
  • Fabricated n- and p-type TFTs exhibit balanced performance with field-effect mobilities of 2.61 and 2.01 cm2 V-1 s-1, respectively.
  • Demonstrated CMOS inverters show a large voltage gain of 80, excellent noise margin (70.8% of ideal), and stable operation under a 100 Hz square waveform.

Conclusions:

  • 2D Ti3C2 MXene is a promising contact material for nanoelectronic applications.
  • MXene-based TFTs and CMOS inverters demonstrate competitive performance and stability.
  • This work highlights the significant potential of MXenes in advancing the field of nanoelectronics.