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Updated: Feb 13, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Suk In Park1,2, Oliver Joe Trojak3, Eunhye Lee1
1Center for Opto-Electronic Materials and Devices Research, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
We grew ultra-thin GaAs quantum dots (QDs) using a novel heating step. These QDs exhibit bright, stable visible light emission, ideal for quantum photonic applications.
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