A quantum light-emitting diode for the standard telecom window around 1,550 nm

Area of Science:

• Quantum optics
• Semiconductor physics
• Quantum information science

Background:

• Non-Poissonian light sources emitting at 1,550 nm are vital for fiber-based quantum networks.
• Semiconductor quantum light sources have faced challenges in accessing this low-loss wavelength region.

Purpose of the Study:

• To demonstrate electrically injected single photon and entangled photon pair emission from indium phosphide quantum dots at 1,550 nm.
• To assess the viability of these sources for quantum communication and computation.

Main Methods:

• Utilizing the biexciton cascade mechanism in indium phosphide quantum dot devices.
• Characterizing single photon emission and entangled photon pair generation.
• Measuring entangled photon fidelity and operational temperature range.

Main Results:

• Successful electrical injection and emission of single photons at 1,550 nm.
• Generation of entangled photon pairs with 87 ± 4% fidelity, suitable for error correction.
• Entangled photon generation demonstrated up to an operating temperature of 93 K.

Conclusions:

• Indium phosphide quantum dots provide a viable semiconductor platform for quantum light sources at 1,550 nm.
• These sources are compatible with existing long-distance quantum communication systems.
• The material platform holds promise for future quantum network hardware development.