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Updated: Feb 13, 2026

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Quantitative characterization of semiconductor structures with a scanning microwave microscope.

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Summary
This summary is machine-generated.

This study refines a near-field scanning microwave microscope method for measuring semiconductor sheet resistance (Rsh). The improved technique enhances accuracy, especially for coaxial probe measurements on GaN films.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Physics

Background:

  • Accurate measurement of semiconductor sheet resistance (Rsh) is crucial for electronic device characterization.
  • Previous methods using near-field scanning microwave microscopy (NSMM) have limitations in specific resistance ranges and probe types.
  • The van der Pauw method serves as a benchmark for electrical property measurements.

Purpose of the Study:

  • To investigate and enhance an existing NSMM method for measuring Rsh in semiconductor films within the 0.1 kΩ/sq to 15 kΩ/sq range.
  • To analyze the performance of both strip-probe and coaxial-probe NSMM configurations.
  • To improve the accuracy of coaxial-probe measurements through optimized calibration techniques.

Main Methods:

  • Utilized a near-field scanning microwave microscope model based on monopole or dipole antenna interaction with layered structures.
  • Employed calibration measurements on etalon samples (initially bulk homogeneous, later GaN films) to determine model fitting parameters.
  • Experimentally validated the method using strip-probe and coaxial-probe microscopes at 1-3 GHz on doped GaN films and heterojunction transistor structures.

Main Results:

  • Satisfactory agreement between NSMM (strip probe) and van der Pauw measurements was achieved across the entire Rsh range using initial calibration.
  • Coaxial-probe measurements showed good agreement only for high-ohmic samples (Rsh > 1 kΩ/sq) with initial calibration.
  • Employing GaN film structures for calibration significantly improved coaxial-probe Rsh measurement accuracy to approximately 10%.

Conclusions:

  • The NSMM method, particularly with strip probes, is effective for measuring Rsh in semiconductor films across a broad range.
  • Optimized calibration using relevant semiconductor structures (like GaN films) is essential for enhancing the accuracy of coaxial-probe NSMM.
  • The refined NSMM technique offers a valuable tool for characterizing semiconductor materials and devices.