Related Experiment Video

Updated: Feb 13, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.3K

A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

Weifeng Chen1, Weijing Wu2, Lei Zhou3

  • 1State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. chenweifengchn@foxmail.com.

Materials (Basel, Switzerland)
|March 15, 2018
PubMed

Keywords:
capacitance–voltage (C–V) characteristicscurrent–voltage (I–V) characteristicsdensity of states (DOS)metal oxide thin-film transistors (TFTs)

More Related Videos

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

10.0K
Processing of Bulk Nanocrystalline Metals at the US Army Research Laboratory08:58

Processing of Bulk Nanocrystalline Metals at the US Army Research Laboratory

Published on: March 7, 2018

9.8K

Related Concept Videos

Bulk Density of Aggregate01:22

Bulk Density of Aggregate

Bulk density refers to the mass of aggregate particles that would fill a unit volume. The concept of bulk density originates from the inability to pack aggregate particles in a manner that completely eliminates void spaces. Hence, the term bulk refers to the volume that encompasses both the aggregates and the voids. This measurement is crucial when aggregates are batched by volume and is used to convert quantities by mass to volume.
Most natural mineral aggregates, like sand and gravel,...
1.2K
Development of Analytical Methods01:21

Development of Analytical Methods

An analytical methodology can be divided into four sequential steps: technique, method, procedure, and protocol. A technique is a scientific principle that rationalizes a specific phenomenon through chemical measurements. Adapting a technique for analyzing a sample of interest is termed a method. The procedure outlines the directions for performing the analysis via an analytical method. The protocol is the detailed guidelines on the procedure, which should be strictly followed to obtain the...
2.4K
Alkali Metals03:06

Alkali Metals

Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
Table 1: Properties of the alkali metals
25.0K
Oxidation Numbers03:14

Oxidation Numbers

In redox reactions, the transfer of electrons occurs between reacting species. Electron transfer is described by a hypothetical number called the oxidation number (or oxidation state). It represents the effective charge of an atom or element, which is assigned using a set of rules.
43.1K
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.2K
Properties of Transition Metals02:58

Properties of Transition Metals

Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
30.1K