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Direct Auger recombination and density-dependent hole diffusion in InN.

Ramūnas Aleksiejūnas1, Žydrūnas Podlipskas2, Saulius Nargelas3

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Direct Auger recombination governs carrier lifetime in indium nitride (InN) at high densities. This finding, along with insights into carrier diffusion, supports InN

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Area of Science:

  • Optoelectronics and Materials Science
  • Semiconductor Physics

Background:

  • Indium nitride (InN) shows promise for infrared optoelectronics.
  • Fast nonradiative recombination and carrier diffusion at high densities in InN are not fully understood.

Purpose of the Study:

  • Investigate carrier recombination mechanisms in InN.
  • Characterize carrier diffusion properties at high densities.
  • Determine the suitability of InN for optoelectronic applications.

Main Methods:

  • Utilized the light-induced transient grating technique.
  • Studied InN epilayers grown by pulsed metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire.
  • Analyzed carrier recombination and diffusion dynamics.

Main Results:

  • Direct Auger recombination dominates carrier lifetime above ~10^18 cm^-3, with a coefficient of (8 ± 1) × 10^-29 cm^3.
  • Auger recombination rate saturates above ~5 × 10^19 cm^-3 due to phase space filling.
  • Hole diffusion coefficient increases linearly with carrier density, reaching ~40 cm^2/s.

Conclusions:

  • MOCVD-grown InN exhibits Auger recombination characteristics suitable for optoelectronics.
  • Carrier diffusion lengths (100-300 nm) are comparable to absorption depth, crucial for bipolar devices.
  • Indium nitride is a promising material for photovoltaic and photonic applications.