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Updated: Feb 13, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
RELATIVISTIC MR-MP ENERGY LEVELS FOR L-SHELL IONS OF SILICON
Juan A Santana1, Nahyr A Lopez-Dauphin1, Peter Beiersdorfer2
1Department of Chemistry, The University of Puerto Rico at Cayey, P. O. Box 372230, Cayey, PR 00737-2230, USA.
Abstract:
Level energies are reported for Si V, Si VI, Si VII, Si VIII, Si IX, Si X, Si XI and Si XII. The energies have been calculated with the relativistic Multi-Reference Møller-Plesset Perturbation Theory method and include valence and K-vacancy states with nl up to 5f. The accuracy of the calculated level energies is established by comparison with the recommended data listed in the National Institute of Standards and Technology (NIST) on-line database. The average deviation of valence level energies ranges from 0.20 eV in Si V to 0.04 eV in Si XII. For K-vacancy states, the available values recommended in the NIST database are limited to Si XII and Si XIII. The average energy deviation is below 0.3 eV for K-vacancy states. The extensive and accurate dataset presented here greatly augments the amount of available reference level energies. We expect our data to ease the line identification of L-shell ions of Si in celestial sources and laboratory generated plasmas, and to serve as energy references in the absence of more accurate laboratory measurements.
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