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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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The hydration of cement takes place within the water-filled capillary pores. However, environmental elements can disrupt this process by evaporating water from the concrete surfaces. Sealed concrete with a water-cement ratio below 0.5 experiences self-desiccation, leading to water loss. The water loss in concrete is mitigated by curing. This technique involves keeping the concrete saturated to maintain the necessary temperature and moisture conditions, to optimally fill the spaces in the cement...
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Concrete members with a small surface-to-volume ratio are cured by oiling and moistening the forms before casting the concrete member. These forms can be left in place for a prolonged period to prevent moisture loss, and can be wetted if made of a material suitable for wetting. If the forms are removed early, the concrete member is moistened and covered with polythene sheets to maintain moisture. For large horizontal concrete surfaces exposed to dry weather, a temporary covering is suspended...
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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High performance printed oxide field-effect transistors processed using photonic curing.

Suresh Kumar Garlapati1, Gabriel Cadilha Marques2, Julia Susanne Gebauer3

  • 1Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen, Germany.

Nanotechnology
|March 20, 2018
PubMed
Summary
This summary is machine-generated.

Photonic curing enables rapid, low-temperature fabrication of high-performance Indium Oxide (In2O3) field-effect transistors (FETs). Different photonic methods allow tuning of threshold voltage, enabling both depletion and enhancement modes for unipolar circuits.

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Oxide semiconductors are key for next-generation printed electronics.
  • Photonic curing offers advantages over thermal curing, including lower temperatures and faster processing.
  • A challenge in oxide electronics is the lack of high-performance p-type semiconductors.

Purpose of the Study:

  • To demonstrate the facile fabrication of high-performance Indium Oxide (In2O3) field-effect transistors (FETs) using dissimilar photonic curing methods.
  • To investigate the tunability of device characteristics, specifically threshold voltage, through different photonic curing techniques.
  • To showcase the potential of these fabricated FETs in unipolar logic circuits.

Main Methods:

  • Fabrication of In2O3 FETs using a precursor ink.
  • Application of two distinct photonic curing methods: UV-visible light and UV-laser.
  • Characterization of the electrical properties of the fabricated FETs, including threshold voltage analysis.

Main Results:

  • High-performance In2O3 FETs were successfully fabricated using both UV-visible light and UV-laser photonic curing.
  • Significant variation in threshold voltage was achieved with the same precursor ink by employing different photonic curing methods.
  • Both depletion-mode and enhancement-mode devices were realized, demonstrating the versatility of the fabrication process.

Conclusions:

  • Photonic curing provides a rapid and efficient route for producing high-performance oxide semiconductor devices.
  • The ability to tune threshold voltage via photonic curing enables the creation of complementary unipolar logic circuits.
  • This approach offers a pathway for low-operation voltage, high-performance electronics with tunable characteristics.