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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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Doped bottom-contact organic field-effect transistors.

Shiyi Liu1, Paul Billig1, Akram Al-Shadeedi1

  • 1Department of Physics, Kent State University, Kent, OH, 44242, United States of America.

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Doping organic field-effect transistors (OFETs) significantly reduces contact resistance and precisely controls threshold voltage. This enhancement boosts charge mobility and overall device performance for micro-scale electronics.

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Area of Science:

  • Organic electronics
  • Semiconductor device physics

Background:

  • Organic field-effect transistors (OFETs) are crucial for flexible electronics.
  • Bottom-contact OFETs often suffer from high contact resistance, limiting performance.
  • Controlling threshold voltage is essential for OFET applications.

Purpose of the Study:

  • To investigate the impact of a doped layer on bottom-gate, bottom-contact OFET performance.
  • To analyze how varying doped layer thickness affects contact resistance and threshold voltage.
  • To determine the influence of doping on charge mobility in OFETs.

Main Methods:

  • Fabrication of bottom-gate, bottom-contact OFETs with a doped layer at the dielectric/organic semiconductor interface.
  • Systematic variation of the doped layer thickness.
  • Electrical characterization to measure threshold voltage, contact resistance, and charge mobility.

Main Results:

  • The doped layer significantly reduced contact resistances from 138.8 MΩ to 0.3 MΩ.
  • Threshold voltage (VT) shifted linearly from -3.1 V to -0.22 V with increasing doped layer thickness.
  • Charge mobility increased with the thickness of the doped layer.

Conclusions:

  • Doping effectively minimizes injection barriers in micro-scale bottom-contact OFETs.
  • The doped layer offers precise control over threshold voltage and enhances charge transport.
  • This doping strategy presents a promising route for improving OFET performance.