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Related Concept Videos

Metallic Solids02:37

Metallic Solids

20.9K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
20.9K
Conductors and Insulators01:19

Conductors and Insulators

10.9K
Some materials may easily let electrical charges pass through them, while others obstruct their flow. The former are called conductors and the latter insulators. The atomic structures of materials determine whether they are conductors or insulators of electricity.
Most metals are conductors. Their atomic configuration is such that one or more electron(s) are loosely bound to the nucleus in each atom. Thus, a sea of mobile electrons are available in them, known as free electrons. Their easy...
10.9K
Properties of Transition Metals02:58

Properties of Transition Metals

30.1K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
30.1K
Inductance: Solid Cylindrical Conductor01:24

Inductance: Solid Cylindrical Conductor

887
To calculate the inductance of a solid cylindrical conductor, consider a 1-meter section of a non-magnetic, current-carrying conductor with radius r. Disregarding end effects and assuming uniform current density, Ampere's law helps determine the magnetic field inside the conductor. This law states that the magnetic field intensity H is concentric and constant within the conductor.
Given the uniform current distribution, the magnetic field Hx and flux density Bx inside the conductor are...
887
Bonding in Metals02:32

Bonding in Metals

52.8K
Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”. 
52.8K
Network Covalent Solids02:18

Network Covalent Solids

16.2K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
16.2K

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Reverse Microemulsion-mediated Synthesis of Monometallic and Bimetallic Early Transition Metal Carbide and Nitride Nanoparticles
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Gate-Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.

Chun-Lan Wu1, Hongtao Yuan1,2,3, Yanbin Li1

  • 1Department of Material Science and Engineering , Stanford University , Stanford , California 94305 , United States.

Nano Letters
|March 28, 2018
PubMed
Summary

This study introduces a solid-state electric-double-layer (EDL) device using LaF3 for tunable carrier density. This approach overcomes limitations of liquid electrolytes, enabling advanced interfacial electronic studies with higher mobility in MoS2 transistors.

Keywords:
Solid electrolyteelectric-double-layer transistormetal−insulator transitiontwo-dimensional materials

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Electric-double-layer (EDL) gating with liquid electrolytes is crucial for studying interfacial electronic phenomena and inducing transitions like insulator-metal.
  • Liquid electrolytes present challenges such as electrochemical reactions, strain, and difficulties in surface characterization.

Purpose of the Study:

  • To develop an all solid-state EDL device using LaF3 as a substrate and gate dielectric.
  • To overcome the limitations of liquid electrolytes in EDL gating.
  • To enable new possibilities for exploring interfacial electronic phenomena.

Main Methods:

  • Fabrication of EDL transistors (EDLTs) using LaF3 as a solid superionic conductor.
  • Utilizing LaF3 as both substrate and fluorine ionic gate dielectric.
  • Inducing and observing the metal-insulator transition in MoS2.

Main Results:

  • Demonstrated a solid-state EDL device with LaF3, achieving wide carrier density tunability without strain or electrochemical issues.
  • Observed the metal-insulator transition in MoS2 using LaF3 EDLTs.
  • Achieved higher carrier mobility in MoS2 transistors due to uniform potential distribution from LaF3's crystal lattice, reducing interface electron scattering.

Conclusions:

  • LaF3 solid electrolyte offers powerful gating capabilities for novel interfacial electronic phenomena.
  • The solid-state approach with LaF3 provides a robust platform for advanced electronic device research.
  • Uniform potential distribution in LaF3 substrates enhances device performance by minimizing electron scattering.