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A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of

Xiao Zou1, Jingping Xu2, Hao Huang3

  • 1Department of Electromachine Engineering, Jianghan University, Wuhan 430056, People's Republic of China.

Nanotechnology
|March 28, 2018
PubMed

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