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    This study introduces a compact, low-power electro-absorption modulator (EAM) using silicon/germanium-silicon heterostructures. This advancement enhances bandwidth density for next-generation photonic interconnects.

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    Area of Science:

    • Photonics
    • Materials Science
    • Electrical Engineering

    Background:

    • Growing demand for integrated, low-power interconnect systems necessitates higher bandwidth density in CMOS photonic devices.
    • Electro-absorption modulators (EAMs) based on Germanium (Ge) and Germanium-Silicon (GeSi) leverage the Franz-Keldysh effect for compact, low-power solutions in communication bands.
    • Next-generation photonic interconnect arrays require devices with reduced footprint and power consumption.

    Purpose of the Study:

    • To present a novel, compact, and low-power electro-absorption modulator (EAM) based on a Silicon (Si)/Germanium-Silicon (GeSi) heterostructure.
    • To demonstrate the device's performance for high-speed optical communication.
    • To detail the design, fabrication process, and measurement analysis of the proposed EAM.

    Main Methods:

    • Design and fabrication of a Si/GeSi heterostructure EAM utilizing an 800 nm Silicon-On-Insulator (SOI) overlayer.
    • Implementation of a fabrication-tolerant process.
    • Performance characterization through eye diagram measurements at a wavelength of 1566 nm.

    Main Results:

    • Achieved a modulation bandwidth of 56 GHz.
    • Demonstrated a dynamic extinction ratio (ER) of 5.2 dB at a data rate of 56 Gb/s.
    • Calculated a low modulator power consumption of 44 femtojoules per bit (fJ/bit).

    Conclusions:

    • The developed Si/GeSi heterostructure EAM offers a compact and low-power solution for high-bandwidth photonic interconnects.
    • The device performance meets the demands for next-generation optical communication systems.
    • The fabrication-tolerant process ensures manufacturability for scaled production.