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Titration Calculations: Strong Acid - Strong Base02:28

Titration Calculations: Strong Acid - Strong Base

34.1K
Calculating pH for Titration Solutions: Strong Acid/Strong Base
A titration is carried out for 25.00 mL of 0.100 M HCl (strong acid) with 0.100 M of a strong base NaOH. The pH at different volumes of added base solution can be calculated as follows:
(a) Titrant volume = 0 mL. The solution pH is due to the acid ionization of HCl. Because this is a strong acid, the ionization is complete and the hydronium ion molarity is 0.100 M. The pH of the solution is then:
34.1K
Strong Acid and Base Solutions03:22

Strong Acid and Base Solutions

36.1K
A strong acid is a compound that dissociates completely in an aqueous solution and produces a concentration of hydronium ions equal to the initial concentration of acid. For example, 0.20 M hydrobromic acid will dissociate completely in water and produces 0.20 M of hydronium ions and 0.20 M of bromide ions.
36.1K
Titration of a Strong Acid with a Strong Base01:23

Titration of a Strong Acid with a Strong Base

10.6K
During the titration of a strong acid with a strong base, pH calculations are primarily based on the concentration of residual hydronium or hydroxide ions. Initially, a strong acid like hydrochloric acid fully dissociates, creating hydronium and chloride ions, resulting in a low pH. The addition of a strong base like sodium hydroxide alters the concentration of hydronium ions by neutralizing them. As more base is added, the pH gradually increases. At the equivalence point, all hydronium ions...
10.6K
Titration Calculations: Weak Acid - Strong Base03:55

Titration Calculations: Weak Acid - Strong Base

49.4K
Calculating pH for Titration Solutions: Weak Acid/Strong Base
For the titration of 25.00 mL of 0.100 M CH3CO2H with 0.100 M NaOH, the reaction can be represented as:
49.4K
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

1.7K
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
1.7K
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)01:22

Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)

1.5K
Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the involved orbitals. The...
1.5K

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Updated: Feb 12, 2026

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
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Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

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InSe: a two-dimensional material with strong interlayer coupling.

Yuanhui Sun1, Shulin Luo, Xin-Gang Zhao

  • 1Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China. lijun_zhang@jlu.edu.cn.

Nanoscale
|April 4, 2018
PubMed
Summary
This summary is machine-generated.

Strong interlayer coupling, not quantum confinement, primarily explains the tunable band gap in two-dimensional (2D) indium selenide (InSe). This coupling influences electronic and vibrational properties, impacting device applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Atomically thin, two-dimensional (2D) indium selenide (InSe) exhibits tunable band gaps and high carrier mobility.
  • The thickness-dependent band gap in InSe is crucial for novel device applications but its origin is debated, often attributed to quantum confinement.

Purpose of the Study:

  • To investigate the fundamental reasons behind the tunable band gap in few-layer indium selenide.
  • To explore the role of interlayer coupling in the electronic and vibrational properties of InSe.

Main Methods:

  • First-principles calculations were employed to study the electronic band structure and vibrational modes of InSe.
  • Analysis focused on the influence of layer thickness and interlayer interactions on material properties.

Main Results:

  • Strong interlayer coupling was identified as the primary factor responsible for the tunable band gap in few-layer InSe.
  • Evidence of strong interlayer coupling includes indirect-to-direct band gap transitions with increasing thickness, characteristic vibrational mode behavior, and layer-dependent carrier mobilities.
  • Distinct properties were observed for different InSe polymorphs (β-InSe and γ-InSe).

Conclusions:

  • Interlayer coupling significantly influences the electronic and vibrational properties of 2D InSe, challenging the sole attribution to quantum confinement.
  • Multi-layer InSe shows promise for field-effect transistor (FET) technologies.
  • InSe serves as an excellent model system for studying interlayer coupling effects in other 2D materials.