Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Zener Diodes

Zener Diodes

Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...

The Ideal Diode

The Ideal Diode

A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...

Diode: Forward bias

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...

Modeling of Diode Forward Characteristics

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

Diode: Reverse bias

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Weissella cibaria-derived dextran alleviates cisplatin-induced kidney injury by remodeling the gut microbiota.

BMC microbiology·2026

Same author

Temporal Signature of Bosonic Stimulation Induced by Dark Exciton in a Two-Photon-Pumped Polariton Condensate.

Physical review letters·2026

Same author

Association between post-Kasai cholangitis episodes, ursodeoxycholic acid regimen, and portal hypertension risk in biliary atresia: a multicenter cross-sectional study.

Pediatric surgery international·2026

Same author

Polar nano-regions enable large spin Hall conductivity in metallic PtCoO<sub>2</sub>.

Nature materials·2026

Same author

Phase-selective Floquet engineering in a charge density wave material.

Proceedings of the National Academy of Sciences of the United States of America·2026

Same author

Synergistic engineering of fluorine doping Fe<sub>x</sub>Mn<sub>1-x</sub>MoO<sub>4</sub>/graphene heterojunction as ultrahigh-rate anode for LIBs.

Scientific reports·2026

Search research articles

Related Experiment Video

Updated: Feb 12, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Nanoscale High-Tc YBCO/GaN Super-Schottky Diode.

Dmitry Panna¹, Krishna Balasubramanian¹, Shlomi Bouscher¹

¹Department of Electrical Engineering, Technion, Haifa, 32000, Israel.

Scientific Reports

|April 6, 2018

Summary

Researchers developed a high-temperature nanoscale super-Schottky diode using a superconductor-semiconductor junction. This breakthrough enables low-voltage microwave applications and future superconductor-semiconductor device integration.

More Related Videos

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

Published on: August 27, 2021

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

Related Experiment Videos

Last Updated: Feb 12, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

Published on: August 27, 2021

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

Area of Science:

Materials Science
Condensed Matter Physics
Electrical Engineering

Background:

Superconducting tunnel junctions are crucial for advanced electronic devices.
High-temperature superconductors offer potential for energy-efficient technologies.
Integrating superconductors with semiconductors presents fabrication challenges.

Purpose of the Study:

To demonstrate a high-temperature nanoscale super-Schottky diode.
To achieve a direct high-temperature superconductor-semiconductor junction.
To explore applications in microwave mixing and detection.

Main Methods:

Pulsed-laser deposition of YBCO (Yttrium Aluminum Garnet) on GaN (Gallium Nitride) thin films.
Buffer-free direct growth for a direct high-Tc superconductor-semiconductor junction.
Analysis of non-linear current-voltage (I-V) characteristics and differential conductance spectra.

Main Results:

Successfully fabricated a nanoscale super-Schottky diode using YBCO on GaN.
Observed strongly non-linear I-V characteristics, suitable for low-voltage applications.
V-shaped differential conductance spectra indicate c-axis tunneling in the cuprate superconductor.

Conclusions:

The buffer-free direct growth enables practical fabrication of high-Tc superconductor-semiconductor devices.
This work paves the way for large-scale integration of superconductor devices in future technologies.
The developed super-Schottky diode shows promise for microwave applications.