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Microwave index engineering for slow-wave coplanar waveguides.

Álvaro Rosa1, Steven Verstuyft2, Antoine Brimont3

  • 1Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n, Valencia, 46022, Spain. alroes3@ntc.upv.es.

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|April 6, 2018
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Summary
This summary is machine-generated.

Researchers engineered slow-wave coplanar waveguides by optimizing capacitive and inductive elements. This achieved a record microwave index of 11.6 up to 40 GHz for advanced microwave and photonic applications.

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Applied Physics

Background:

  • Slow-wave coplanar waveguides are crucial for microwave, photonics, plasmonics, and metamaterials.
  • Existing designs often face limitations in achieving high microwave indices while maintaining impedance matching.
  • The need for enhanced performance in these waveguides necessitates innovative design strategies.

Purpose of the Study:

  • To investigate microwave index engineering for designing advanced slow-wave coplanar waveguides.
  • To introduce and optimize novel capacitive and inductive elements to boost the microwave index.
  • To ensure compatibility with standard 50 Ω impedance for external electronic devices.

Main Methods:

  • Systematic analysis of the contribution of inductive and capacitive elements.
  • Optimization of these elements to influence the performance of slow-wave coplanar waveguides.
  • Experimental demonstration of the designed waveguide structures.

Main Results:

  • A significantly increased microwave index was achieved through the proposed design approach.
  • The impedance was maintained close to 50 Ω, ensuring device compatibility.
  • An experimentally demonstrated microwave index of 11.6 up to 40 GHz was recorded.

Conclusions:

  • The proposed method of introducing and optimizing capacitive and inductive elements is effective for microwave index engineering.
  • The achieved record microwave index of 11.6 in coplanar waveguides opens new possibilities for high-frequency applications.
  • This advancement is vital for developing next-generation microwave, photonic, plasmonic, and metamaterial devices.