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Updated: Feb 12, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Alexander Epping1,2, Luca Banszerus1,2, Johannes Güttinger1,2
1JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany.
Researchers explored quantum transport in molybdenum disulfide (MoS2) using photodoping. This technique enabled the study of mesoscopic effects in MoS2 constrictions, revealing quantum confinement phenomena.
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