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Flexible Memristive Devices Based on InP/ZnSe/ZnS Core-Multishell Quantum Dot Nanocomposites
Do Hyeong Kim1, Chaoxing Wu1, Dong Hyun Park1
1Department of Electronics and Computer Engineering , Hanyang University , Seoul 04763 , Republic of Korea.
ACS Applied Materials & Interfaces
|April 11, 2018
Summary
The addition of a zinc sulfide (ZnS) shell layer significantly enhances the memory performance of flexible memristive devices utilizing indium phosphide/zinc selenide/zinc sulfide (InP/ZnSe/ZnS) quantum dots (QDs). These QD-based devices exhibit improved on/off ratios and stable electrical characteristics, even after bending.
Area of Science:
- Materials Science
- Nanotechnology
- Device Physics
Background:
- Flexible memristive devices are crucial for next-generation electronics.
- Quantum dots (QDs) offer unique properties for memory applications.
- Core-multishell QD structures can be engineered to optimize device performance.
Purpose of the Study:
- To investigate the impact of a ZnS shell layer on the memory performance of flexible memristive devices.
- To analyze the charge storage capability and electrical characteristics of InP/ZnSe/ZnS core-multishell QDs.
- To evaluate the stability and reliability of these devices under mechanical stress.
Main Methods:
- Fabrication of flexible memristive devices incorporating InP/ZnSe and InP/ZnSe/ZnS core-multishell QDs within a poly(methylmethacrylate) matrix.
- Characterization of device memory performance, including on/off ratios, retention times, and endurance cycles.
- Assessment of device stability through bending tests.
- Analysis of electrical characteristics such as set and reset voltages.
- Investigation of operating mechanisms based on electron trapping and release.
Main Results:
- Devices with InP/ZnSe/ZnS QDs showed a significantly higher on/off ratio (8.5 × 10^3) compared to InP/ZnSe QDs (4.2 × 10^2).
- The InP/ZnSe/ZnS QD-based devices maintained stable memory characteristics after bending.
- Excellent retention times (1 × 10^4 s) and endurance cycles (> 1 × 10^2) were observed.
- Reliable electrical characteristics were confirmed with set voltages (1.3–2.1 V) and reset voltages (-2.3 to -3.1 V).
Conclusions:
- The ZnS shell layer is critical for enhancing the charge storage capability and memory performance of flexible memristive devices.
- The InP/ZnSe/ZnS QD-based devices demonstrate robust mechanical stability and reliable electrical properties, suitable for flexible electronics.
- The electron trapping and release mechanism is proposed as the primary operating mode for these devices.
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