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Updated: Feb 12, 2026

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
Published on: October 6, 2020
Effect of Nb concentration on the spin-orbit coupling strength in Nb-doped SrTiO3 epitaxial thin films
Seong Won Cho1,2, Milim Lee1, Sungmin Woo3
1Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Korea.
Abstract:
Several oxide materials have attracted much interest for the application in spintronic devices due to unusual properties originating from the strongly correlated orbital and spin degrees of freedom. One missing part in oxide spintronics is a good spin channel featured by strong spin-orbit coupling (SOC) which enables an efficient control of the electron's spin. We have systematically investigated the dependence of the SOC strength of Sr(Nb x Ti1-x)O3 thin films on Nb concentration (nNb = 2~20 at. %) as a deeper exploration of a recent finding of the strong SOC in a heavily Nb-doped SrTiO3 (Sr(Nb0.2Ti0.8)O3) epitaxial film. Apart from a finding of a proportionality of the SOC to nNb, we have observed an intriguing temperature dependence of the SOC strength and the anisotropic magnetoresistance (MR) in the intermediate nNb region. These phenomena are associated with the temperature dependence of Landé g-factor and the change of the band structure, which is consistent with the result of density functional theory (DFT) calculation.
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