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Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)2/Al2O3 Filamentary Switching Devices

Tareq Ahmad1, Wouter Devulder2, Karl Opsomer2

  • 1Department of Solid State Sciences , Ghent University , Krijgslaan 281 (S1) , 9000 Ghent , Belgium.

ACS Applied Materials & Interfaces
|April 14, 2018
PubMed

Keywords:
AFMCBRAMchalcogenideconductive bridge random access memoryelectrical functionalityselectorthermal stabilityvolatile filament

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