Related Experiment Video
Updated: Feb 11, 2026
09:39
In-situ Tapering of Chalcogenide Fiber for Mid-infrared Supercontinuum Generation
Published on: May 27, 2013
12.8K
Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
Xuechao Yu1, Peng Yu2, Di Wu3,4
1Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering & The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Nature Communications
|April 20, 2018
Summary
Atomically thin platinum diselenide (PtSe2) shows tunable mid-infrared bandgaps through layer and defect control. This breakthrough enables high-performance mid-infrared optoelectronic devices, including broadband detectors.
Area of Science:
- Optoelectronics
- Materials Science
- Condensed Matter Physics
Background:
- Mid-infrared (MIR) technologies are crucial for applications like optical communications, biomedical imaging, and night vision.
- Existing MIR materials, such as Mercury Cadmium Telluride and Indium Antimonide, face challenges in achieving suitable bandgaps.
- Quantum superlattices offer an alternative but present their own complexities.
Purpose of the Study:
- To explore novel two-dimensional (2D) materials for mid-infrared optoelectronics.
- To demonstrate the tunability of the bandgap in platinum diselenide (PtSe2) for MIR applications.
- To develop high-performance MIR optoelectronic devices using engineered 2D materials.
Main Methods:
- Experimental investigation of two-dimensional (2D) atomically thin platinum diselenide (PtSe2).
- Layer and defect engineering to modulate the material's bandgap.
- Fabrication and characterization of a mid-infrared photoconductive detector.
Main Results:
- Demonstrated that bilayer PtSe2 with defect modulation exhibits strong mid-infrared light absorption.
- Achieved a functional mid-infrared photoconductive detector with broadband operation.
- Confirmed the variable bandgap nature of 2D PtSe2 in the mid-infrared range.
Conclusions:
- Atomically thin PtSe2 offers a promising platform for tunable mid-infrared optoelectronics.
- Layer and defect engineering are effective strategies for optimizing PtSe2 bandgaps.
- This research opens avenues for 2D noble metal dichalcogenides in advanced MIR devices.
More Related Videos
Related Concept Videos
02:54Noble Gases
22.9K
The elements in group 18 are noble gases (helium, neon, argon, krypton, xenon, and radon). They earned the name “noble” because they were assumed to be nonreactive since they have filled valence shells. In 1962, Dr. Neil Bartlett at the University of British Columbia proved this assumption to be false.
22.9K
01:24Metal-Semiconductor Junctions
1.1K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.1K
01:27Biasing of Metal-Semiconductor Junctions
632
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
632
03:06Alkali Metals
25.0K
Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
Table 1: Properties of the alkali metals
Table 1: Properties of the alkali metals
25.0K
03:08Atomic Radii and Effective Nuclear Charge
62.3K
The elements in groups of the periodic table exhibit similar chemical behavior. This similarity occurs because the members of a group have the same number and distribution of electrons in their valence shells.
62.3K
02:37Metallic Solids
20.9K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
20.9K