Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS₂ Films

Semiconducting 2D materials, such as SnS₂ , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS₂ films has remained a great challenge. Herein, continuous wafer-scale 2D SnS₂ films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS₂ films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS₂ films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.