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Updated: Feb 11, 2026

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer
Published on: January 10, 2017
Vertical Stratification Engineering for Organic Bulk-Heterojunction Devices
Liqiang Huang1, Gang Wang2, Weihua Zhou1
1College of Chemistry , Nanchang University , 999 Xuefu Avenue , Nanchang 330031 , China.
Abstract:
High-efficiency organic solar cells (OSCs) can be produced through optimization of component molecular design, coupled with interfacial engineering and control of active layer morphology. However, vertical stratification of the bulk-heterojunction (BHJ), a spontaneous activity that occurs during the drying process, remains an intricate problem yet to be solved. Routes toward regulating the vertical separation profile and evaluating the effects on the final device should be explored to further enhance the performance of OSCs. Herein, we establish a connection between the material surface energy, absorption, and vertical stratification, which can then be linked to photovoltaic conversion characteristics. Through assessing the performance of temporary, artificial vertically stratified layers created by the sequential casting of the individual components to form a multilayered structure, optimal vertical stratification can be achieved. Adjusting the surface energy offset between the substrate results in donor and acceptor stabilization of that stratified layer. Further, a trade-off between the photocurrent generated in the visible region and the amount of donor or acceptor in close proximity to the electrode was observed. Modification of the substrate surface energy was achieved using self-assembled small molecules (SASM), which, in turn, directly impacted the polymer donor to acceptor ratio at the interface. Using three different donor polymers in conjunction with two alternative acceptors in an inverted organic solar cell architecture, the concentration of polymer donor molecules at the ITO (indium tin oxide)/BHJ interface could be increased relative to the acceptor. Appropriate selection of SASM facilitated a synchronized enhancement in external quantum efficiency and power conversion efficiencies over 10.5%.
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