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Skyrmions in Magnetic Tunnel Junctions
Xueying Zhang1,2, Wenlong Cai1, Xichao Zhang3
1Fert Beijing Institute, BDBC, School of Electronic and Information Engineering , Beihang University , Beijing 100191 , China.
ACS Applied Materials & Interfaces
|April 24, 2018
Summary
Researchers demonstrate skyrmion nucleation in magnetic tunnel junctions (MTJs) using spin-polarized current and stray fields. Skyrmion properties are tunable, enabling potential applications in multibit storage and artificial neural networks.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Materials Science
Background:
- Magnetic tunnel junctions (MTJs) are key components in magnetic memory and logic devices.
- Skyrmions are topologically protected spin textures with potential for high-density data storage.
- Dzyaloshinskii-Moriya interactions (DMIs) are crucial for stabilizing and manipulating skyrmions.
Purpose of the Study:
- To demonstrate the nucleation of skyrmions in an MTJ free layer.
- To investigate the influence of Dzyaloshinskii-Moriya interactions (DMIs) and stray fields on skyrmion formation.
- To propose a novel device architecture for skyrmion-based applications.
Main Methods:
- Utilizing spin-polarized current for skyrmion nucleation.
- Employing stray fields from a pinned layer to assist nucleation.
- Investigating the effects of DMI strength and stray field distribution on skyrmion characteristics.
Main Results:
- Successfully nucleated skyrmions in the MTJ free layer.
- Demonstrated tunability of skyrmion size, stability, and number via DMI and stray fields.
- Analyzed the interplay between stray field and DMI effective fields.
Conclusions:
- Skyrmion nucleation in MTJs is achievable with spin-polarized current and stray fields.
- Tunable skyrmion properties open possibilities for advanced spintronic devices.
- Proposed multilevel tunneling magnetoresistance device could enable skyrmion-based multibit storage and neuromorphic computing.
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