Strain-engineered inverse charge-funnelling in layered semiconductors.

Adolfo De Sanctis1, Iddo Amit2, Steven P Hepplestone2

  • 1Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, UK. a.de-sanctis@exeter.ac.uk.

Nature Communications
|April 27, 2018
PubMed
Summary

Researchers observed the inverse charge-funnel effect in HfS2 using strain-induced electric fields. This led to a significant enhancement in phototransistor responsivity, paving the way for efficient solar cells.

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