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Updated: Feb 11, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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High Efficiency Light-Emitting Transistor with Vertical Metal-Oxide Heterostructure

Xiang Liu1,2, Wenjian Kuang2, Haibin Ni2

  • 1Division of Nanophotonics, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 10010, China.

Small (Weinheim an Der Bergstrasse, Germany)
|April 28, 2018
PubMed

Keywords:
high efficiencyhigh mobilitylarge arealight-emitting transistors (LETs)metal-oxide heterostructuresquantum dots (QDs)

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