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Alkali Metals

Alkali Metals

Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
Table 1: Properties of the alkali metals

Oxidation Numbers

Oxidation Numbers

In redox reactions, the transfer of electrons occurs between reacting species. Electron transfer is described by a hypothetical number called the oxidation number (or oxidation state). It represents the effective charge of an atom or element, which is assigned using a set of rules.

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Metallic Solids

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....

Properties of Transition Metals

Properties of Transition Metals

Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.

Metal-Ligand Bonds

Metal-Ligand Bonds

The hemoglobin in the blood, the chlorophyll in green plants, vitamin B-12, and the catalyst used in the manufacture of polyethylene all contain coordination compounds. Ions of the metals, especially the transition metals, are likely to form complexes.
In these complexes, transition metals form coordinate covalent bonds, a kind of Lewis acid-base interaction in which both of the electrons in the bond are contributed by a donor (Lewis base) to an electron acceptor (Lewis acid). The Lewis acid in...

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Related Experiment Video

Updated: Feb 11, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

High Efficiency Light-Emitting Transistor with Vertical Metal-Oxide Heterostructure.

Xiang Liu^1,2, Wenjian Kuang², Haibin Ni²

¹Division of Nanophotonics, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 10010, China.

Small (Weinheim an Der Bergstrasse, Germany)

|April 28, 2018

Summary

Researchers developed a high-efficiency light-emitting transistor (LET) using inorganic quantum dots (QDs). This breakthrough integrates light emission with transistors, achieving record performance for future displays and lighting.

Keywords:

high efficiency high mobility large area light-emitting transistors (LETs)metal-oxide heterostructures quantum dots (QDs)

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Last Updated: Feb 11, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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Published on: November 28, 2017

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

Area of Science:

Materials Science
Optoelectronics
Semiconductor Devices

Background:

Monolithic integration of light-emission with logic transistors is a key goal in electronics.
Existing light-emitting transistors (LETs) often face challenges in efficiency and scalability.

Purpose of the Study:

To report a high-efficiency light-emitting transistor (LET) by integrating inorganic quantum dots (QDs) with a laser-annealed vertical metal-oxide heterostructure.
To demonstrate the potential of this approach for scalable and cost-effective integrated displays and lighting.

Main Methods:

Fabrication of a quantum dot light-emitting transistor (QLET) using a laser-annealed vertical metal-oxide heterostructure.
Characterization of the QLET's optoelectronic properties, including efficiency, luminance, electron mobility, and stability.

Main Results:

Achieved a peak efficiency of 11% and luminance of 8000 cd/m² at 585 nm.
Demonstrated ultrahigh electron mobility (up to 25 cm²/Vs) and low efficiency roll-off (7% at 3000 cd/m²).
Exhibited excellent stability under long-duration gate stress switching cycles.

Conclusions:

The developed QDs LET (QLET) shows record-breaking performance for LETs.
The fabrication process is compatible with conventional silicon manufacturing, enabling scalable and cost-effective production.
This technology holds significant promise for future integrated versatile displays and lighting applications.