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p-type doping efficiency in CdTe: Influence of second phase formation.

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Phosphorus dopant solubility in cadmium telluride (CdTe) bulk crystals is limited by second-phase defect formation, hindering high net carrier densities. Minimizing these defects is key to enhancing CdTe crystal properties.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Crystal Growth

Background:

  • Cadmium telluride (CdTe) is a crucial semiconductor material.
  • Achieving high dopant activation and solubility in CdTe is essential for device performance.
  • Phosphorus (P) doping in CdTe has been explored, but limited by low net carrier densities.

Purpose of the Study:

  • To investigate the factors limiting phosphorus dopant solubility and activation in bulk CdTe crystals.
  • To understand the role of second-phase defects in inhibiting dopant incorporation.
  • To identify methods for minimizing defect formation and enhancing dopant solubility.

Main Methods:

  • Vertical Bridgman melt growth technique for phosphorus-doped CdTe ingots.
  • Analysis of dopant incorporation and net carrier densities.
  • Characterization of second-phase defects, including composition and formation kinetics.

Main Results:

  • Reproducible growth of CdTe ingots with significant P incorporation was achieved.
  • Net carrier densities were significantly lower than expected based on P solubility limits.
  • A substantial portion of P was found in second-phase defects, primarily cadmium phosphide (CdP2).
  • Melt stoichiometry and cooling rates critically impact dopant solubility and defect formation.

Conclusions:

  • Second-phase defect formation, specifically CdP2, is the primary limitation to achieving high net carrier densities in P-doped CdTe.
  • Controlling growth conditions is crucial to minimize these defects.
  • Strategies to reduce second-phase defects offer a pathway to enhance P solubility and activation in bulk CdTe.