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Giant Piezomagnetism in Mn3NiN
David Boldrin1, Andrei P Mihai2, Bin Zou2
1Department of Physics, Blackett Laboratory , Imperial College London , London SW7 2AZ , U.K.
ACS Applied Materials & Interfaces
|May 5, 2018
Summary
Giant piezomagnetism was observed in antiperovskite Mn3NiN, a linear magneto-mechanic coupling effect. This discovery in geometrically frustrated antiferromagnets opens new avenues for spintronic memory devices.
Area of Science:
- Solid State Physics
- Materials Science
- Spintronics
Background:
- Controlling magnetism via electric fields or strain is crucial for spintronics.
- Giant piezomagnetism, a linear magneto-mechanic coupling, is a key phenomenon.
- Antiferromagnetic materials with geometric frustration are promising candidates for novel devices.
Purpose of the Study:
- To demonstrate giant piezomagnetism in antiperovskite Mn3NiN.
- To explore the potential of Mn3NiN for new memory device concepts.
- To investigate the magneto-mechanic coupling effects in strained Mn3NiN films.
Main Methods:
- Fabrication of Mn3NiN films with controlled intrinsic biaxial strains.
- Growth of Mn3NiN films on BaTiO3 substrates to induce uniaxial strain.
- Measurement of Néel transition shifts and magnetization changes under strain.
- Characterization of strain coupling efficiency and magnetoelectric coefficient.
Main Results:
- Intrinsic biaxial strains of ±0.25% shifted the Néel transition by up to 60 K.
- Films on BaTiO3 exhibited a significant magnetization jump due to uniaxial strain.
- An inferred strain coupling efficiency of 44% and a magnetoelectric coefficient α of 0.018 G cm/V were measured.
- The observed magnetoelectric coefficient showed a 1000-fold increase compared to Cr2O3.
Conclusions:
- Giant piezomagnetism is confirmed in antiperovskite Mn3NiN, driven by geometric frustration.
- The material shows potential for advanced spintronic memory applications.
- Further research into Mn-based antiperovskites may yield even larger piezomagnetic effects at room temperature.
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