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Updated: Feb 10, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Author Correction: High-quality AlN grown with a single substrate temperature below 1200 °C
Chun-Pin Huang1, Kapil Gupta2, Chao-Hung Wang2
1Department of Optics and Photonics, National Central University, Chung-Li, 320, Taiwan.
Abstract:
A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.
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