Related Experiment Video
Updated: Feb 10, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Author Correction: High-quality AlN grown with a single substrate temperature below 1200 °C
Chun-Pin Huang1, Kapil Gupta2, Chao-Hung Wang2
1Department of Optics and Photonics, National Central University, Chung-Li, 320, Taiwan.
This study has been corrected. An error was identified and has now been fixed in the published paper, ensuring data accuracy.
Area of Science:
- Scientific communication and publication integrity.
Context:
- A published scientific article contained an error.
- This error has been identified and rectified.
Purpose:
- To formally announce a correction to a previously published scientific paper.
- To ensure readers are aware of the updated and accurate information.
Summary:
- A correction notice has been issued for this article.
- The identified error within the paper has been resolved and corrected.
Impact:
- Ensures the integrity and reliability of the scientific record.
- Provides accurate information to researchers and readers relying on the published data.
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