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High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated

Penghui He1, Congbiao Jiang1, Linfeng Lan1

  • 1State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China.

ACS Nano
|May 10, 2018
PubMed
Summary

Quantum dot hybrid light-emitting field-effect transistors (QD-HLEFETs) achieve high performance by combining quantum dots with scandium-doped indium oxide. This innovation enhances electron mobility, brightness, and efficiency for advanced display technologies.

Keywords:
light-emitting field-effect transistorslow temperatureoxide semiconductorquantum dotsolution-processed

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