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This study measured the reaction rate of deuterium-substituted silylene (SiD2) with ethylene (C2H4). The results show a rapid isotopic scrambling mechanism, similar to its hydrogen counterpart.

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Area of Science:

  • Chemical Kinetics
  • Photochemistry
  • Organosilicon Chemistry

Background:

  • Silylenes are reactive silicon intermediates.
  • Understanding their reaction mechanisms is crucial for silicon chemistry.

Purpose of the Study:

  • To determine rate constants for the bimolecular reaction of deuterium-substituted silylene (SiD2) with ethylene (C2H4).
  • To investigate the reaction mechanism, including isotopic scrambling.

Main Methods:

  • Laser flash photolysis of deuterium-substituted phenylsilane (PhSiD3) to generate SiD2.
  • Gas-phase kinetic study over a pressure range of 1-100 Torr using SF6 as a bath gas at 295 K.
  • Gas chromatography analysis to identify reaction products.

Main Results:

  • Rate constants for SiD2 + C2H4 were pressure-independent.
  • The rate constants were similar in magnitude to SiH2 + C2H4 at the high-pressure limit.
  • Evidence suggests a rapid isotopic scrambling mechanism, akin to SiH2 + C2D4.

Conclusions:

  • The reaction of SiD2 with C2H4 proceeds via a rapid isotopic scrambling mechanism.
  • The reaction exhibits similarities to SiH2 + H2 and its isotopic variants.
  • Key products like silirane and vinylsilane were not definitively detected under the experimental conditions.