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Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers
Xiannian Yao1, Qingqing Duan2, Junwei Tong3
1Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China. 1670523@stu.neu.edu.cn.
Abstract:
Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance, have been observed in organic spintronics. Significant progress has been made in understanding spin-dependent transport phenomena, such as spin injection or tunneling, manipulation, and detection in organic spintronics. However, to date, materials that are effective for preparing organic spin devices for commercial applications are still lacking. In this report, we introduce basic knowledge of the fabrication and evaluation of organic spin devices, and review some remarkable applications for organic spin valves using molecular spacers. The current bottlenecks that hinder further enhancement for the performance of organic spin devices is also discussed. This report presents some research ideas for designing organic spin devices operated at room temperature.
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