Nanoscale thermal cross-talk effect on phase-change probe memory

Phase-change probe memory is considered as one of the most promising means for next-generation mass storage devices. However, the achievable storage density of phase-change probe memory is drastically affected by the resulting thermal cross-talk effect while previously lacking detailed study. Therefore, a three dimensional model that couples electrical, thermal, and phase-change processes of the Ge₂Sb₂Te₅ media is developed, and subsequently deployed to assess the thermal cross-talk effect based on a Si/TiN/ Ge₂Sb₂Te₅/diamond-like carbon (DLC) structure by appropriately tailoring the electro-thermal and geometrical properties of the storage media stack for a variety of external excitations. The modeling results show that the DLC capping with a thin thickness, a high electrical conductivity, and a low thermal conductivity is desired to minimize the thermal cross-talk, while the TiN underlayer has a slight impact on the thermal cross-talk. Combining the modeling findings with the previous film deposition experience, an optimized phase-change probe memory architecture is presented, and its capability of providing ultra-high recording density simultaneously with a sufficiently low thermal cross-talk is demonstrated.