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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Spin-to-charge conversion is a key phenomenon in spintronics.
  • Mercury telluride (HgTe) and its alloys offer unique electronic properties due to their band structure.
  • Understanding conversion mechanisms is crucial for developing novel electronic devices.

Purpose of the Study:

  • To investigate spin-to-charge current conversion in strained mercury telluride (HgTe) at room temperature.
  • To explore the role of a mercury cadmium telluride (HgCdTe) barrier in enhancing conversion efficiency.
  • To elucidate the underlying physical mechanisms responsible for the observed conversion rates.

Main Methods:

  • Utilizing spin pumping experiments to generate spin currents.
  • Employing strained HgTe layers with a protective HgCdTe barrier.
  • Measuring conversion efficiency and inverse Edelstein lengths.
  • Analyzing the temperature dependence of resistivity.

Main Results:

  • Observed significant spin-to-charge current conversion in strained HgTe at room temperature.
  • Achieved high conversion rates with inverse Edelstein lengths up to 2.0±0.5 nm using a HgCdTe barrier.
  • Demonstrated that HgTe layer thickness influences conversion efficiency differently than predicted by spin Hall effect models.
  • Correlated high conversion rates with the spin momentum locking property of HgTe surface states.

Conclusions:

  • The study confirms efficient spin-to-charge conversion in strained HgTe at room temperature.
  • The HgCdTe barrier effectively protects HgTe and enhances conversion rates, attributed to spin momentum locking.
  • The findings suggest HgTe surface states are a promising platform for spintronic applications.