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Effect of Band Bending and Energy Level Alignment at the Donor/Acceptor Interface on Open-Circuit Voltage in Organic
Seiichiro Izawa1,2, Naoto Shintaku1,2, Masahiro Hiramoto1,2
1Institute for Molecular Science , 5-1 Higashiyama, Myodaiji , Okazaki , Aichi 444-8787 , Japan.
Abstract:
Open-circuit voltage ( VOC) is a key parameter governing the power conversion efficiency of organic solar cells. We clarified the effect of band bending in organic semiconductor films on the VOC of phthalocyanine (H2Pc)/fullerene (C60) planar heterojunction (PHJ) OSCs. The VOC was significantly affected by the H2Pc layer thickness, varying from 0.20 V at 2 nm to 0.49 V at 100 nm thickness. The large VOC change is due to the band bending in the H2Pc layer, where the difference in H2Pc layer thickness led to significant changes in the degree of the vacuum-level shift in the C60 layer because of the Fermi level ( EF) difference between the H2Pc and C60 layers. This result demonstrated that a new influential factor affecting the VOC is the position of the EF that is dependent on band bending in organic semiconductor films.
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