Anti-reflectance investigation of a micro-nano hybrid structure fabricated by dry/wet etching methods
Xiao Tan1,2,3, Zhi Tao1,2,3, Mingxing Yu1,2,3
1School of Energy and Power Engineering, Beihang University, Beijing, 100191, China.
Abstract:
Black silicon fabrication and manipulation have been well reported by institutes around the world and are quite useful for solar absorption and photovoltaic conversion. In this study, silicon micro-nano hybrid structures were fabricated, and the morphologies of the hybrid structures were analyzed. This paper studied nanostructures formed on tips, pits and a flat surface using a dry etching method and a wet etching method. In terms of nanostructure morphology, nanostructures etched by the wet etching method (13 μm) were taller than those etched by the dry etching method (1 μm), but the wet etched morphology was less organized. After the nanostructures were grown, six samples with nano sturctures and three samples with micro sturctures were measured by a photometer for reflectivity testing. The nine samples were compared and analyzed using the integral of reflectivity and solar emissivity at the earth's surface. The results show that the nanostructures grown on a tip surface using the wet etching method had the minimum reflectivity in the wavelength range of 300 nm-1100 nm, in consideration of the forbidden energy gap of silicon.
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