Investigating the coumarin capability in chalcogenide 20TI₂Se-80Pr₂Se₃ system based photovoltaics

Area of Science:

• Materials Science
• Solid State Physics
• Optoelectronics

Background:

• Chalcogenide materials are widely used in optoelectronic devices.
• Doping with organic molecules like coumarin can modify material properties.
• Semiconductor diodes are fundamental components in electronic circuits.

Purpose of the Study:

• To investigate the electrical and photoresponse properties of coumarin-doped chalcogenide films on p-type silicon substrates.
• To determine the effect of coumarin concentration on diode characteristics.
• To explore the potential for photocarrier generation in these novel structures.

Main Methods:

• Deposition of chalcogenide films with varying coumarin content onto p-type silicon.
• Fabrication of Al/coumarin-doped chalcogenide/p-Si diodes.
• Electrical characterization using current-voltage (I-V) measurements.
• Photoresponse characterization under varying illumination intensities.
• Capacitance-voltage (C-V) measurements.
• Analysis of transient photocurrent and capacitance using the Kohlrausch function.

Main Results:

• The Al/coumarin-doped chalcogenide/p-Si structures exhibited rectifying diode behavior.
• Coumarin doping significantly influenced the characteristic parameters of the diodes.
• The Kohlrausch function effectively determined photocarrier density (ρph) and relaxation time constants from transient measurements.
• Evidence of photocarrier generation was observed in the coumarin-doped films.

Conclusions:

• Coumarin-doped chalcogenide films on p-type silicon form functional rectifying diodes.
• The concentration of coumarin is a critical factor in tuning diode performance.
• These materials show promise for applications requiring efficient photocarrier generation, such as photodetectors or solar cells.