Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Capacitor With A Dielectric01:18

Capacitor With A Dielectric

5.0K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
5.0K
Emerging Adulthood01:27

Emerging Adulthood

723
Jeffrey Arnett's concept of emerging adulthood offers a framework to understand the unique developmental stage between adolescence and full-fledged adulthood, generally from ages 18 to 25. This period is marked by extensive exploration and shifts in identity, relationships, and career choices, a process known in psychology as role experimentation. Emerging adulthood reflects the evolving cultural expectations surrounding adulthood and the dynamic process of personal transformation during...
723
Gauss's Law in Dielectrics01:17

Gauss's Law in Dielectrics

5.2K
Consider a polar dielectric placed in an external field. In such a dielectric, opposite charges on adjacent dipoles neutralize each other, such that the net charge within the dielectric is zero. When a polar dielectric is inserted in between the capacitor plates, an electric field is generated due to the presence of net charges near the edge of the dielectric and the metal plates interface. Since the external electrical field merely aligns the dipoles, the dielectric as a whole is neutral. An...
5.2K
Underflow Gates01:30

Underflow Gates

420
Underflow gates are vital for controlling water flow in irrigation canals. The three main types of underflow gates — vertical, radial, and drum gates — serve different purposes while ensuring effective flow management. Vertical gates move up and down, generating a free-flowing water jet; radial gates pivot to regulate the flow; and drum gates rotate for precise adjustments. The flow through these gates is influenced by downstream conditions, resulting in free or drowned outflow.Free and...
420
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

6.1K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
6.1K
Ligand-Gated Ion Channel Receptor: Gating Mechanism01:30

Ligand-Gated Ion Channel Receptor: Gating Mechanism

4.1K
Ligand-gated ion channels are transmembrane proteins that play a vital role in intercellular communication and functions of the nervous system. They allow the influx of ions across the membrane once the neurotransmitter binds, allowing the subsequent transmission of electrical excitation across the neurons. Other ligand-gated ion channels, like the γ-aminobutyric acid (GABA) receptor, permit anions like chloride into the cells on the binding of the GABA molecule. Their entry into the cell...
4.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

The Role of Defect Geometry in Localized Emission from Monolayer Tungsten Dichalcogenides.

ACS nano·2026
Same author

Bottom-Up Absorptive and Stretchable Plasmonic Tape for Field-Deployable In Vivo Fruit Safety Surveillance.

ACS sensors·2026
Same author

A new era for optical-coupled scanning probe microscopy.

National science review·2026
Same author

Terminal Hydroxylated Side-Chains Enhance Ionic-Electronic Coupling Efficiency in Small-Molecule Semiconductors.

Angewandte Chemie (International ed. in English)·2026
Same author

Toward Unraveling Solvent-Induced Chirality at the Solid-Liquid Interface.

The journal of physical chemistry letters·2026
Same author

On-Surface Synthesis of Pentalene Rich Nanoribbons for Exploring Their Activity in Hydrogen Evolution Reaction.

The journal of physical chemistry letters·2026

Related Experiment Video

Updated: Feb 10, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics.

Binghao Wang1,2, Wei Huang1, Lifeng Chi2

  • 1Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.

Chemical Reviews
|May 23, 2018
PubMed
Summary

This review explores high-capacitance (high-k) gate dielectrics for flexible and stretchable electronics (FSE). It details materials, fabrication, and performance of FSE thin-film transistors (TFTs) using emerging semiconductors.

More Related Videos

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires
07:50

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

Published on: January 21, 2016

10.4K
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

9.3K

Related Experiment Videos

Last Updated: Feb 10, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K
A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires
07:50

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

Published on: January 21, 2016

10.4K
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

9.3K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Flexible and stretchable electronics (FSE) offer alternatives to rigid silicon, enabling applications like wearable sensors and flexible displays.
  • Key components like semiconductors, dielectrics, and conductors must possess compatible electrical and mechanical properties for FSE.
  • High-capacitance (high-k) gate dielectrics are crucial for enabling high-performance thin-film transistors (TFTs) in FSE.

Purpose of the Study:

  • To review and analyze recent advancements in materials and fabrication techniques for high-k gate dielectrics in FSE.
  • To discuss the structure, operation, and advantages of high-k dielectrics in FSE TFTs.
  • To summarize the performance of FSE TFTs utilizing various high-k dielectrics and emerging semiconductors.

Main Methods:

  • Comprehensive literature review and analysis of materials concepts and fabrication techniques for high-k dielectrics.
  • Discussion of TFT structures, operation mechanisms, and dielectric requirements.
  • Categorization and presentation of high-k polymer, inorganic, electrolyte, and hybrid dielectric families.

Main Results:

  • High-k dielectrics significantly enhance the performance of FSE TFTs compared to low-k alternatives.
  • Various fabrication methods are suitable for depositing high-k dielectric thin films for TFTs.
  • Emerging semiconductors integrated with high-k dielectrics show promising performance in FSE applications.

Conclusions:

  • High-k dielectrics are vital for advancing FSE technology, particularly for TFTs.
  • Continued research into novel materials and fabrication processes is necessary to overcome current challenges.
  • The integration of high-k dielectrics with advanced semiconductors will drive future innovations in flexible and stretchable electronics.