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Published on: July 18, 2025
Intervalley Scattering of Interlayer Excitons in a MoS2/MoSe2/MoS2 Heterostructure in High Magnetic Field
Alessandro Surrente1, Łukasz Kłopotowski2, Nan Zhang1
1Laboratoire National des Champs Magnétiques Intenses , UPR 3228, CNRS-UGA-UPS-INSA, 38042/31400 Grenoble/Toulouse , France.
Abstract:
Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals heterostructures based on transition metal dichalcogenides. Using magneto-photoluminescence spectroscopy, we achieve a deeper insight into the valley polarization and depolarization mechanisms of interlayer excitons formed across a MoS2/MoSe2/MoS2 heterostructure. We account for the nontrivial behavior of the valley polarization as a function of the magnetic field by considering the interplay between exchange interaction and phonon-mediated intervalley scattering in a system consisting of Zeeman-split energy levels. Our results represent a crucial step toward the understanding of the properties of interlayer excitons with strong implications for the implementation of atomically thin valleytronic devices.
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