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Updated: Feb 9, 2026
Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
Published on: February 27, 2017
Interfacial Electronic Structures of Photodetectors Based on C8BTBT/Perovskite
Lin Li1, Sichao Tong, Yuan Zhao
1School of Electronics and Information Engineering , Central South University of Forestry and Technology , Changsha 410004 , P. R. China.
Abstract:
Comprehensive measurements of ultraviolet photoemission spectroscopy, X-ray photoemission spectroscopy, X-ray diffraction, and atomic force microscopy are adopted to investigate the corelevance of energy level alignment, molecular orientation, and film growth of Au/C8BTBT/perovskite interfaces. A small energy offset of valence band maximum of 0.06 eV between perovskite and C8BTBT makes hole transportation feasible. About 0.65 eV upward shift of energy levels is observed with the deposition of the Au film on C8BTBT, which enhances hole transportation to the Au electrode. The observations from the interface analysis are supported by a prototype photodetector of Au (80 nm)/C8BTBT (20 nm)/perovskite (100 nm) that exhibits excellent performances whose responsivity can reach up to 2.65 A W-1, 4 times higher than the best CH3NH3PbI3 photodetectors.
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